IXGN320N60A3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Mounting Style :

Screw Mounts

Polarity/Channel Type :

N-Channel

Product Status :

Active

Series :

GenX3™

Published :

2009

Weight :

38.000013g

Max Power Dissipation :

735W

Supplier Device Package :

SOT-227B

Terminal Position :

UPPER

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Chassis Mount

Dimensions :

38.23 x 25.07 x 9.6mm

Max Collector Current :

320A

RoHS Status :

ROHS3 Compliant

IGBT Type :

PT

Package :

Tube

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

320A

Number of Terminations :

4

Switching Speed :

5kHz

Turn On Time :

139 ns

Power - Max :

735W

Terminal Finish :

Nickel

Voltage - Collector Emitter Breakdown (Max) :

600V

Current - Collector Cutoff (Max) :

150μA

Base Product Number :

IXGN320

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Turn-Off Delay Time :

290 ns

Width :

25.42 mm

Number of Pins :

4

Additional Feature :

LOW CONDUCTION LOSS, UL RECOGNIZED

Factory Lead Time :

30 Weeks

Number of Elements :

1

Transistor Application :

POWER CONTROL

Input Capacitance (Cies) @ Vce :

18nF @ 25V

Length :

38.23 mm

NTC Thermistor :

No

Maximum Operating Temperature :

+150 °C

Input :

Standard

Turn On Delay Time :

63 ns

Brand :

IXYS

Product Category :

IGBT Transistors

Vce(on) (Max) @ Vge, Ic :

1.25V @ 15V, 100A

Configuration :

Single

VCEsat-Max :

1.25 V

Channel Type :

N

Package / Case :

SOT-227-4, miniBLOC

Package Type :

SOT-227B

Technology :

Si

RoHS :

Details

Mount :

Chassis Mount, Screw

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

1870 ns

Manufacturer :

IXYS

Height :

9.6 mm

Pin Count :

4

Input Capacitance :

18nF

Gate-Emitter Voltage-Max :

20V

Minimum Operating Temperature :

-55 °C

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

600V

Product Type :

IGBT Transistors

Transistor Element Material :

SILICON