IXGN320N60A3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Case Connection :

Isolated

Configuration :

Single

Channel Type :

N

Length :

38.23 mm

Number of Elements :

1

Brand :

IXYS

Factory Lead Time :

30 Weeks

Maximum Operating Temperature :

+150 °C

Published :

2009

Terminal Form :

UNSPECIFIED

Base Product Number :

IXGN320

Max Collector Current :

320A

Lead Free :

Lead Free

Manufacturer :

IXYS

Transistor Application :

POWER CONTROL

Weight :

38.000013g

NTC Thermistor :

No

Pbfree Code :

yes

Package :

Tube

Product Category :

IGBT Transistors

Minimum Operating Temperature :

-55 °C

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

290 ns

Product Status :

Active

IGBT Type :

PT

Technology :

Si

Input Capacitance (Cies) @ Vce :

18nF @ 25V

Current - Collector (Ic) (Max) :

320A

RoHS :

Details

Collector Emitter Breakdown Voltage :

600V

Product Type :

IGBT Transistors

Number of Terminations :

4

Packaging :

Tube

Mounting Type :

Chassis Mount

Pin Count :

4

Terminal Position :

UPPER

Dimensions :

38.23 x 25.07 x 9.6mm

Number of Pins :

4

Supplier Device Package :

SOT-227B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

600V

Gate-Emitter Voltage-Max :

20V

Mounting Style :

Screw Mounts

Polarity/Channel Type :

N-Channel

Width :

25.42 mm

Series :

GenX3™

RoHS Status :

ROHS3 Compliant

Power - Max :

735W

Vce(on) (Max) @ Vge, Ic :

1.25V @ 15V, 100A

Package Type :

SOT-227B

Switching Speed :

5kHz

Max Power Dissipation :

735W

Current - Collector Cutoff (Max) :

150μA

VCEsat-Max :

1.25 V

Voltage - Collector Emitter Breakdown (Max) :

600V

Input :

Standard

Terminal Finish :

Nickel

Turn Off Time-Nom (toff) :

1870 ns

Turn On Delay Time :

63 ns

Mount :

Chassis Mount, Screw

Height :

9.6 mm

Additional Feature :

LOW CONDUCTION LOSS, UL RECOGNIZED

Input Capacitance :

18nF

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-227-4, miniBLOC

Turn On Time :

139 ns

Transistor Element Material :

SILICON