FZ800R33KF2CB3S2NDSA1
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- Mfr.Part #
- FZ800R33KF2CB3S2NDSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 3300V 1A 9600W
- Stock
- 20,324
- In Stock ：
- 20,324
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- * Fullname:
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- * Quantity:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- -40°C~125°C
- NTC Thermistor :
- No
- Configuration :
- Half Bridge
- Mounting Type :
- Chassis Mount
- Input :
- Standard
- Voltage - Collector Emitter Breakdown (Max) :
- 3300V
- Package / Case :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 4.25V @ 15V, 800A
- Current - Collector Cutoff (Max) :
- 5mA
- Input Capacitance (Cies) @ Vce :
- 100nF @ 25V
- Power - Max :
- 9600W
- Datasheets
- FZ800R33KF2CB3S2NDSA1
FZ800R33KF2CB3S2NDSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FZ800R33KF2CB3S2NDSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FZ800R33KF2CB3S2NDSA1 Applications
Motor Drives
·Resonant Inverter Appliccations
Traction Drives
UPS Systems
·Wind Turbines
FZ800R33KF2CB3S2NDSA1 Features
·Extended Operation Temperature Tyjop
·High DC Stability
High Short Circuit CapabilitySelf Limiting Short Circuit Current
Low Switching Losses
Unbeatable Robustness
·VcEsatwith positive Temperature Coefficient
Mechanical Features
·4 kV AC 1min Insulation
·Package with CTI>400
·High Creepage and Clearance Distances
·High Power and Thermal Cycling Capability
·High Power Density
·Substrate for Low Thermal Resistance
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