IXGN320N60A3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Max Collector Current :

320A

VCEsat-Max :

1.25 V

Published :

2009

Length :

38.23 mm

Base Product Number :

IXGN320

Maximum Operating Temperature :

+150 °C

Vce(on) (Max) @ Vge, Ic :

1.25V @ 15V, 100A

Number of Elements :

1

Terminal Position :

UPPER

Package Type :

SOT-227B

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

20V

Power - Max :

735W

Input Capacitance :

18nF

Polarity/Channel Type :

N-Channel

Terminal Finish :

Nickel

Lead Free :

Lead Free

Pin Count :

4

Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V

Reach Compliance Code :

Unknown

Minimum Operating Temperature :

-55 °C

Packaging :

Tube

Height :

9.6 mm

Turn Off Time-Nom (toff) :

1870 ns

Input :

Standard

Turn-Off Delay Time :

290 ns

IGBT Type :

PT

Manufacturer :

IXYS

Max Power Dissipation :

735W

Width :

25.42 mm

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Channel Type :

N

Turn On Time :

139 ns

NTC Thermistor :

No

Current - Collector (Ic) (Max) :

320A

Product Type :

IGBT Transistors

Factory Lead Time :

30 Weeks

Product Status :

Active

Number of Pins :

4

Mount :

Chassis Mount, Screw

Input Capacitance (Cies) @ Vce :

18nF @ 25V

Voltage - Collector Emitter Breakdown (Max) :

600V

Technology :

Si

Mounting Style :

Screw Mounts

Switching Speed :

5kHz

Transistor Application :

POWER CONTROL

RoHS :

Details

Series :

GenX3™

Collector Emitter Breakdown Voltage :

600V

Case Connection :

Isolated

Product Category :

IGBT Transistors

Package / Case :

SOT-227-4, miniBLOC

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

SOT-227B

Dimensions :

38.23 x 25.07 x 9.6mm

Current - Collector Cutoff (Max) :

150μA

Operating Temperature :

-55°C~150°C TJ

Weight :

38.000013g

Number of Terminations :

4

Additional Feature :

LOW CONDUCTION LOSS, UL RECOGNIZED

Terminal Form :

UNSPECIFIED

Brand :

IXYS

Turn On Delay Time :

63 ns

Transistor Element Material :

SILICON