FS450R12KE3BOSA1
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- Mfr.Part #
- FS450R12KE3BOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 600A 2100W
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Case Connection :
- Isolated
- Turn On Time :
- 400 ns
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Package / Case :
- Module
- Pbfree Code :
- No
- Terminal Position :
- UPPER
- Input Capacitance (Cies) @ Vce :
- 32nF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 450A
- Collector Emitter Saturation Voltage :
- 2.15V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 2.1kW
- Halogen Free :
- Not Halogen Free
- Published :
- 2002
- NTC Thermistor :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Screw
- Pin Count :
- 29
- Max Collector Current :
- 600A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 162mm
- IGBT Type :
- Trench Field Stop
- Contact Plating :
- Tin
- Operating Temperature :
- -40°C~125°C TJ
- Max Power Dissipation :
- 2.1kW
- Number of Pins :
- 29
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Number of Terminations :
- 29
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Lead Free :
- Contains Lead
- Mounting Type :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- Turn Off Time-Nom (toff) :
- 810 ns
- Factory Lead Time :
- 14 Weeks
- Current - Collector Cutoff (Max) :
- 5mA
- Qualification Status :
- Not Qualified
- Power - Max :
- 2100W
- Configuration :
- Three Phase Inverter
- Number of Elements :
- 6
- Width :
- 150mm
- ECCN Code :
- EAR99
- Height :
- 17mm
- Datasheets
- FS450R12KE3BOSA1
FS450R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS450R12KE3BOSA1 Description
FS450R12KE3BOSA1 is a 1200v -EconoPACK+ with trench/fieldstop IGBT3 and Emitter Controlled High-Efficiency diode. The FS450R12KE3BOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Wireless infrastructure, Enterprise systems, and Enterprise projectors due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS450R12KE3BOSA1 is in the tray package with 2100W Power dissipation.
FS450R12KE3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 600A
Repetitive peak collector current Tp = 1 ms: 900A
Total power dissipation Tc = 25°C: 2100W
Gate-emitter peak voltage: ±20V
FS450R12KE3BOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Wireless infrastructure
Enterprise systems
Enterprise projectors
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