2PB710AS,115
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- Mfr.Part #
- 2PB710AS,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SMT3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- JESD-30 Code :
- R-PDSO-G3
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Transistor Type :
- PNP
- Power - Max :
- 250mW
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max (Abs) :
- 0.25W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- VCEsat-Max :
- 0.6 V
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Transition Frequency :
- 140MHz
- Frequency - Transition :
- 140MHz
- Collector-Base Capacitance-Max :
- 15pF
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2PB710A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 150mA 10V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- Datasheets
- 2PB710AS,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB710AS,115 Overview
In this device, the DC current gain is 170 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2PB710AS,115 Features
the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 140MHz
2PB710AS,115 Applications
There are a lot of NXP USA Inc.
2PB710AS,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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