2PB710AS,115
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- Mfr.Part #
- 2PB710AS,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SMT3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Published :
- 2009
- VCEsat-Max :
- 0.6 V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Power - Max :
- 250mW
- Frequency - Transition :
- 140MHz
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2PB710A
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Surface Mount
- Collector-Base Capacitance-Max :
- 15pF
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 140MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-G3
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Power Dissipation-Max (Abs) :
- 0.25W
- HTS Code :
- 8541.21.00.75
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 150mA 10V
- Datasheets
- 2PB710AS,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB710AS,115 Overview
In this device, the DC current gain is 170 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2PB710AS,115 Features
the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 140MHz
2PB710AS,115 Applications
There are a lot of NXP USA Inc.
2PB710AS,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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