2PB710ARL,235
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- Mfr.Part #
- 2PB710ARL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A TO236AB
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -600mV
- Base Part Number :
- 2PB710A
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Datasheets
- 2PB710ARL,235
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB710ARL,235 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB710ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB710ARL,235 Applications
There are a lot of Nexperia USA Inc.
2PB710ARL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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