2PB710ARL,235
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- Mfr.Part #
- 2PB710ARL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A TO236AB
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -600mV
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2PB710A
- Power Dissipation :
- 250mW
- Frequency :
- 120MHz
- Max Collector Current :
- 500mA
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Published :
- 2008
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pin Count :
- 3
- hFE Min :
- 40
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transition Frequency :
- 120MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Datasheets
- 2PB710ARL,235
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB710ARL,235 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2PB710ARL,235 Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2PB710ARL,235 Applications
There are a lot of Nexperia USA Inc.
2PB710ARL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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