2PB709ASW,115
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- Mfr.Part #
- 2PB709ASW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 11,738
- In Stock ：
- 11,738
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 100mA
- Element Configuration :
- Single
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Transistor Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 80MHz
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- -6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 80MHz
- Base Part Number :
- 2PB709A
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 500mV
- hFE Min :
- 210
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -45V
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Published :
- 2009
- Datasheets
- 2PB709ASW,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ASW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 100mA volts.
2PB709ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 80MHz
2PB709ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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