2PB709ASW,115
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- Mfr.Part #
- 2PB709ASW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 11,738
- In Stock ：
- 11,738
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -45V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Current - Collector (Ic) (Max) :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 80MHz
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -6V
- hFE Min :
- 210
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2PB709A
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 500mV
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 80MHz
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Datasheets
- 2PB709ASW,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ASW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 100mA volts.
2PB709ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 80MHz
2PB709ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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