UT6JA3TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W Ta

Avalanche Energy Rating (Eas) :

4 mJ

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 4.5V

Pulsed Drain Current-Max (IDM) :

12A

Package / Case :

8-PowerUDFN

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Surface Mount :

yes

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N6

Drain-source On Resistance-Max :

0.059Ohm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Operating Temperature :

150°C TJ

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Mounting Type :

Surface Mount