UT6JA2TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.103Ohm

Package / Case :

6-PowerUDFN

Pulsed Drain Current-Max (IDM) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 15V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

2W

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

70m Ω @ 4A, 10V

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-PDSO-N6

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

20 Weeks

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Surface Mount :

yes

Case Connection :

DRAIN

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

6.5 mJ

Drain Current-Max (Abs) (ID) :

4A