US6K2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Rise Time :

6ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.4A

Base Part Number :

*K2

Package / Case :

6-SMD, Flat Leads

Radiation Hardening :

No

Current Rating :

1.4A

JESD-609 Code :

e2

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.4A, 10V

Power Dissipation :

1W

Mounting Type :

Surface Mount

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Element Configuration :

Dual

Number of Terminations :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Elements :

2

Lead Free :

Lead Free

Resistance :

380mOhm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

6 ns

Mount :

Surface Mount

Max Power Dissipation :

1W

Number of Pins :

6

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

13 ns

Published :

2007

Voltage - Rated DC :

30V

Fall Time (Typ) :

8 ns

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V