US6K1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Element Configuration :

Dual

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Resistance :

340mOhm

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Base Part Number :

*K1

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

6 ns

Max Power Dissipation :

1W

Continuous Drain Current (ID) :

1.5A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Pins :

6

Mounting Type :

Surface Mount

Voltage - Rated DC :

30V

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Pin Count :

6

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Mount :

Surface Mount

Radiation Hardening :

No

JESD-609 Code :

e2

Turn On Delay Time :

7 ns

Gate to Source Voltage (Vgs) :

12V

Package / Case :

6-SMD, Flat Leads

Published :

2006

Number of Terminations :

6

REACH SVHC :

No SVHC

Number of Elements :

2

Factory Lead Time :

16 Weeks

Rise Time :

9ns

Current Rating :

1.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Vgs(th) (Max) @ Id :

1.5V @ 1mA

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Threshold Voltage :

1.5V