UM6K34NTCN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Elements :

2

Power - Max :

120mW

Pin Count :

6

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Pbfree Code :

yes

Mount :

Surface Mount

Lead Free :

Lead Free

Published :

2011

FET Feature :

Logic Level Gate, 0.9V Drive

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

200mA

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

6

Vgs(th) (Max) @ Id :

800mV @ 1mA

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

120mW

Operating Temperature :

150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

2.8Ohm

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

16 Weeks

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

50V

Drain Current-Max (Abs) (ID) :

0.2A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 10V