UM6K33NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

Factory Lead Time :

16 Weeks

Rise Time :

6ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

200mA

ECCN Code :

EAR99

Turn On Delay Time :

4 ns

Drain Current-Max (Abs) (ID) :

0.2A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

8V

Published :

2010

Vgs(th) (Max) @ Id :

1V @ 1mA

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

50V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

15 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

2.4Ohm

FET Feature :

Logic Level Gate, 1.2V Drive

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

DS Breakdown Voltage-Min :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Fall Time (Typ) :

55 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Max Power Dissipation :

120mW

Mount :

Surface Mount