STS5DNF60L
- Mfr.Part #
- STS5DNF60L
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 5A 8-SOIC
- Stock
- 7,660
- In Stock :
- 7,660
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rise Time :
- 28ns
- Drain Current-Max (Abs) (ID) :
- 5A
- Turn-Off Delay Time :
- 45 ns
- Turn On Delay Time :
- 15 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 5A
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- LOW THRESHOLD
- Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Base Part Number :
- STS5D
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Pin Count :
- 8
- FET Type :
- 2 N-Channel (Dual)
- FET Feature :
- Logic Level Gate
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 60V
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Drain-source On Resistance-Max :
- 0.055Ohm
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 2A, 10V
- Gate to Source Voltage (Vgs) :
- 15V
- Number of Terminations :
- 8
- Datasheets
- STS5DNF60L
STS5DNF60L Documents

STS5DNF60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STS5DNF60L Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF60L Features
? AEC-Q101 qualified
? Exceptional dv/dt capability
? 100% avalanche tested
? Low gate charge
STS5DNF60L Applications
? Switching applications
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