STS5DNF60L
- Mfr.Part #
- STS5DNF60L
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 5A 8-SOIC
- Stock
- 7,660
- In Stock :
- 7,660
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Base Part Number :
- STS5D
- Turn On Delay Time :
- 15 ns
- Transistor Application :
- SWITCHING
- Pin Count :
- 8
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 2
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 5A
- FET Feature :
- Logic Level Gate
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 10 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 2W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101, STripFET™ II
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Rise Time :
- 28ns
- Turn-Off Delay Time :
- 45 ns
- Drain Current-Max (Abs) (ID) :
- 5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Additional Feature :
- LOW THRESHOLD
- Gate to Source Voltage (Vgs) :
- 15V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- DS Breakdown Voltage-Min :
- 60V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.055Ohm
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 2A, 10V
- FET Type :
- 2 N-Channel (Dual)
- Lead Free :
- Lead Free
- Datasheets
- STS5DNF60L
STS5DNF60L Documents

STS5DNF60L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STS5DNF60L Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF60L Features
? AEC-Q101 qualified
? Exceptional dv/dt capability
? 100% avalanche tested
? Low gate charge
STS5DNF60L Applications
? Switching applications
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