STS5PF20V

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Base Part Number :

STS5P

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.5A, 4.5V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pin Count :

8

Terminal Position :

Dual

Rise Time :

47ns

Vgs(th) (Max) @ Id :

450mV @ 250μA

Number of Pins :

8

Continuous Drain Current (ID) :

5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

39 ns

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Series :

STripFET™ II

Peak Reflow Temperature (Cel) :

260

Current Rating :

-5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 2.5V

Qualification Status :

Not Qualified

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

412pF @ 15V

Voltage - Rated DC :

-20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation-Max :

2.5W Tc

Pulsed Drain Current-Max (IDM) :

20A

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-20V

RoHS Status :

ROHS3 Compliant