STS5N15F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Turn-Off Delay Time :

39.7 ns

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

2710pF @ 25V

Turn On Delay Time :

13.5 ns

Pulsed Drain Current-Max (IDM) :

20A

Factory Lead Time :

20 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

5A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Terminations :

8

Series :

DeepGATE™, STripFET™

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.063Ohm

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

STS5N

Continuous Drain Current (ID) :

5A

Power Dissipation :

2.5W

Vgs (Max) :

±20V

Rise Time :

5.1ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

63m Ω @ 2.5A, 10V

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

150V

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

2.5W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Additional Feature :

AVALANCHE RATED

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

11.4 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Radiation Hardening :

No