STS5DNF20V
- Mfr.Part #
- STS5DNF20V
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 5A 8-SOIC
- Stock
- 8,460
- In Stock :
- 8,460
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Base Part Number :
- STS5D
- Drain Current-Max (Abs) (ID) :
- 5A
- FET Feature :
- Logic Level Gate
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 7 ns
- Voltage - Rated DC :
- 20V
- Current Rating :
- 5A
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 20V
- Number of Terminations :
- 8
- Max Power Dissipation :
- 2W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 8
- Series :
- STripFET™ II
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Number of Elements :
- 2
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 2.5A, 4.5V
- Pin Count :
- 8
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Threshold Voltage :
- 2.7V
- Fall Time (Typ) :
- 10 ns
- Length :
- 5mm
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 5A
- Turn-Off Delay Time :
- 27 ns
- JESD-609 Code :
- e4
- Rise Time :
- 33ns
- Width :
- 4mm
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 40mOhm
- FET Type :
- 2 N-Channel (Dual)
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.65mm
- Gate to Source Voltage (Vgs) :
- 12V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- STS5DNF20V

STS5DNF20V datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STS5DNF20V Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF20V Features
? Ultra low threshold gate drive (2.7 V)
? Standard outline for easy automated surface
mount assembly
STS5DNF20V Applications
? Switching application
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