STS4DPF20L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Series :

STripFET™

Pin Count :

8

Width :

4mm

Pulsed Drain Current-Max (IDM) :

16A

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Current Rating :

-4A

Base Part Number :

STS4D

Transistor Element Material :

SILICON

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Additional Feature :

LOW THRESHOLD

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Rise Time :

35ns

Height :

1.25mm

Power Dissipation :

2W

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Resistance :

80mOhm

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Power - Max :

1.6W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Turn-Off Delay Time :

125 ns

Threshold Voltage :

1.6V

Turn On Delay Time :

25 ns

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

-20V

Number of Terminations :

8

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Fall Time (Typ) :

35 ns

Length :

5mm

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

Number of Pins :

8

Mount :

Surface Mount