STS4C3F60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

54ns

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Turn-Off Delay Time :

39 ns

Drain to Source Breakdown Voltage :

60V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

530mA

Additional Feature :

LOW THRESHOLD

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 4.5V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.065Ohm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Base Part Number :

STS4C

Pulsed Drain Current-Max (IDM) :

16A

FET Type :

N and P-Channel

Max Power Dissipation :

500mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Pin Count :

8

Fall Time (Typ) :

14.5 ns

Series :

STripFET™

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Number of Elements :

2

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Current Rating :

4A

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing