STS4C3F60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Series :

STripFET™

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Drain to Source Breakdown Voltage :

60V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Fall Time (Typ) :

14.5 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

16A

Max Power Dissipation :

500mW

Pin Count :

8

Number of Elements :

2

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

55m Ω @ 2A, 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

FET Type :

N and P-Channel

Terminal Position :

Dual

Continuous Drain Current (ID) :

530mA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn-Off Delay Time :

39 ns

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Additional Feature :

LOW THRESHOLD

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.065Ohm

Rise Time :

54ns

Current Rating :

4A

Base Part Number :

STS4C

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

4A