STS4DNFS30L
- Mfr.Part #
- STS4DNFS30L
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4A 8SO
- Stock
- 19,925
- In Stock :
- 19,925
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Series :
- STripFET™
- Power Dissipation :
- 2W
- Current Rating :
- 4A
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 25V
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 16V
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Width :
- 12.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 22 ns
- Drain Current-Max (Abs) (ID) :
- 4A
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Height :
- 6.35mm
- Terminal Form :
- Gull wing
- FET Feature :
- Schottky Diode (Isolated)
- Turn On Delay Time :
- 11 ns
- Length :
- 6.35mm
- Continuous Drain Current (ID) :
- 4A
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Base Part Number :
- STS4D
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Vgs (Max) :
- ±16V
- Power Dissipation-Max :
- 2W Tc
- Turn-Off Delay Time :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 5V
- Rise Time :
- 100ns
- Pin Count :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Voltage - Rated DC :
- 30V
- Weight :
- 4.535924g
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 2A, 10V
- JESD-609 Code :
- e4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Resistance :
- 56mOhm
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- STS4DNFS30L

N-Channel Tape & Reel (TR) 55m Ω @ 2A, 10V ±16V 330pF @ 25V 9nC @ 5V 8-SOIC (0.154, 3.90mm Width)
STS4DNFS30L Description
The STMicroelectronics STS4DNFS30L is an N-channel Power MOSFET. It associates the latest low voltage STripFET? in the N-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
STS4DNFS30L Features
-
Standard outline for easy automated surface mount assembly
-
Low threshold gate drive
-
Integrated SCHOTTKY rectifier
STS4DNFS30L Applications
-
Printers
-
Portable equipment
-
Cellular phones
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