STS1DNC45

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

400mA

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Number of Terminations :

8

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Fall Time (Typ) :

4 ns

Series :

SuperMESH™

FET Type :

2 N-Channel (Dual)

Voltage - Rated DC :

450V

Turn On Delay Time :

6.7 ns

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Avalanche Energy Rating (Eas) :

30 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

450V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Number of Pins :

8

Current Rating :

400mA

Max Power Dissipation :

1.6W

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain Current-Max (Abs) (ID) :

0.4A

Terminal Form :

Gull wing

Rise Time :

4ns

Pin Count :

8

Operating Temperature :

150°C TJ

Base Part Number :

STS1D

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

1.6A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Lead Free :

Lead Free