STS11N3LLH5
- Mfr.Part #
- STS11N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SO
- Stock
- 80,117
- In Stock :
- 80,117
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 2.7W Tc
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn-Off Delay Time :
- 21 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2.7W
- Terminal Form :
- Gull wing
- Pin Count :
- 8
- Series :
- STripFET™ V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 1V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Resistance :
- 13.2mOhm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Base Part Number :
- STS11
- Gate to Source Voltage (Vgs) :
- 22V
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 1 V
- Rise Time :
- 4.2ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 44A
- Radiation Hardening :
- No
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Input Capacitance (Ciss) (Max) @ Vds :
- 724pF @ 25V
- Continuous Drain Current (ID) :
- 11A
- Turn On Delay Time :
- 4 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 5.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- JESD-609 Code :
- e4
- FET Type :
- N-Channel
- Vgs (Max) :
- +22V, -20V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 3.5 ns
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- STS11N3LLH5

N-Channel Tape & Reel (TR) 14m Ω @ 5.5A, 10V +22V, -20V 724pF @ 25V 5nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS11N3LLH5 Overview
The maximum input capacitance of this device is 724pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 44A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
STS11N3LLH5 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 44A.
a threshold voltage of 1V
STS11N3LLH5 Applications
There are a lot of STMicroelectronics
STS11N3LLH5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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