STS12NF30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

90ns

Current Rating :

12A

Element Configuration :

Single

Power Dissipation :

2.5W

Series :

STripFET™ II

Resistance :

9mOhm

Row Spacing :

6.3 mm

Height :

1.25mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Continuous Drain Current (ID) :

12A

Turn On Delay Time :

35 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Number of Pins :

8

Base Part Number :

STS12

Pbfree Code :

yes

Additional Feature :

LOW THRESHOLD

FET Type :

N-Channel

Mount :

Surface Mount

Length :

5mm

Vgs (Max) :

±16V

Dual Supply Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Packaging :

Cut Tape (CT)

Number of Terminations :

8

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

80 ns

ECCN Code :

EAR99

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Threshold Voltage :

1V

Width :

4.05mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

9m Ω @ 6A, 10V

Pin Count :

8