STS10P4LLF6

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Mfr.Part #
STS10P4LLF6
Manufacturer
STMicroelectronics
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 40V 10A 8SO
Stock
1,691
In Stock :
1,691

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Factory Lead Time :
20 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
40V
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
ECCN Code :
EAR99
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 4.5V
Power Dissipation-Max :
2.7W Ta
FET Type :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3525pF @ 25V
Height :
1.5mm
Vgs(th) (Max) @ Id :
1V @ 250μA (Min)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
170 ns
Turn On Delay Time :
49.4 ns
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
10A
Rds On (Max) @ Id, Vgs :
15m Ω @ 3A, 10V
Number of Pins :
8
Width :
4mm
Length :
5mm
Series :
STripFET™ F6
Base Part Number :
STS10
Packaging :
Cut Tape (CT)
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STS10P4LLF6 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Pins:8, Base Part Number:STS10, STS10P4LLF6 pinout, STS10P4LLF6 datasheet PDF, STS10P4LLF6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STS10P4LLF6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STS10P4LLF6


P-Channel Cut Tape (CT) 15m Ω @ 3A, 10V ±20V 3525pF @ 25V 34nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)

STS10P4LLF6   Description


The STS10P4LLF6 is a P-channel power MOSFET developed by STripFET F6 technology and has a new groove gate structure. The resulting power MOSFET shows a very low RDS (conduction) in all packages.

 

STS10P4LLF6   Features


? Very low on-resistance

? Very low gate charge

? High avalanche ruggedness

? Low gate drive power loss


STS10P4LLF6    Applications


? Switching applications


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