STL8DN10LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

190 mJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

6

Package / Case :

8-PowerVDFN

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Element Configuration :

Dual

Rise Time :

9.6ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 4A, 10V

Base Part Number :

STL8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Fall Time (Typ) :

5.2 ns

Series :

Automotive, AEC-Q101, STripFET™ III

Power Dissipation :

70W

Max Power Dissipation :

70W

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F6

Number of Elements :

2

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

50.6 ns

Pulsed Drain Current-Max (IDM) :

31.2A

Transistor Application :

SWITCHING

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 25V

Mounting Type :

Surface Mount

Turn On Delay Time :

8.7 ns

Continuous Drain Current (ID) :

20A

Mount :

Surface Mount