STL85N6F3
- Mfr.Part #
- STL85N6F3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 85A POWERFLAT
- Stock
- 1,404
- In Stock :
- 1,404
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 8.5A, 10V
- Rise Time :
- 14.3ns
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 76A
- Radiation Hardening :
- No
- Pin Count :
- 8
- Package / Case :
- 8-PowerVDFN
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE ENERGY RATED
- Fall Time (Typ) :
- 7.1 ns
- Resistance :
- 6.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Turn-Off Delay Time :
- 38.4 ns
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation-Max :
- 80W Tc
- Continuous Drain Current (ID) :
- 19A
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STL85
- Terminal Position :
- Dual
- Power Dissipation :
- 4W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- JESD-30 Code :
- R-PDSO-N5
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Series :
- STripFET™
- Turn On Delay Time :
- 21.8 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- STL85N6F3

N-Channel Tape & Reel (TR) 5.7m Ω @ 8.5A, 10V ±20V 3400pF @ 25V 60nC @ 10V 8-PowerVDFN
STL85N6F3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38.4 ns.Peak drain current is 76A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STL85N6F3 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38.4 ns
based on its rated peak drain current 76A.
STL85N6F3 Applications
There are a lot of STMicroelectronics
STL85N6F3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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