STL8N10F7
- Mfr.Part #
- STL8N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V POWERFLAT
- Stock
- 41,608
- In Stock :
- 41,608
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- DS Breakdown Voltage-Min :
- 100V
- Number of Pins :
- 8
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Flat
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Series :
- DeepGATE™, STripFET™ VII
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Package / Case :
- 8-PowerVDFN
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-F5
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 4A, 10V
- Base Part Number :
- STL8
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 140A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3.5W Ta 50W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 50V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Drain Current-Max (Abs) (ID) :
- 35A
- Drain-source On Resistance-Max :
- 0.02Ohm
- Datasheets
- STL8N10F7

N-Channel Cut Tape (CT) 20m Ω @ 4A, 10V ±20V 2000pF @ 50V 22nC @ 10V 100V 8-PowerVDFN
Description
The STL8N10F7 is an N-channel 100 V, 17 m|? typ., 8 A STripFET? F7 Power MOSFET in a PowerFLAT? 3.3x3.3 package. With an improved trench gate structure and STripFET? F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.
Features
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
-
Among the lowest RDS(on) on the market
-
Excellent FoM (figure of merit)
-
Maximum junction temperature (TJ(max))
Applications
-
Switching applications
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
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