STL80N75F6
- Mfr.Part #
- STL80N75F6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A POWERFLAT
- Stock
- 43,403
- In Stock :
- 43,403
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 80W Tc
- Rds On (Max) @ Id, Vgs :
- 6.3m Ω @ 9A, 10V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-N5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-PowerVDFN
- Radiation Hardening :
- No
- Pin Count :
- 8
- Continuous Drain Current (ID) :
- 80A
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Dual
- Base Part Number :
- STL80
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 75V
- Series :
- DeepGATE™, STripFET™ VI
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Power Dissipation :
- 80W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7120pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 5
- Resistance :
- 6.3mOhm
- Pulsed Drain Current-Max (IDM) :
- 74A
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- STL80N75F6

N-Channel Tape & Reel (TR) 6.3m Ω @ 9A, 10V ±20V 7120pF @ 25V 100nC @ 10V 8-PowerVDFN
STL80N75F6 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.As far as peak drain current is concerned, its maximum pulsed current is 74A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STL80N75F6 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
based on its rated peak drain current 74A.
STL80N75F6 Applications
There are a lot of STMicroelectronics
STL80N75F6 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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