STGWT80V60DF
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- Mfr.Part #
- STGWT80V60DF
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 600V 120A 469W TO-3P
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- ROHS3 Compliant
- Test Condition :
- 400V, 80A, 5 Ω, 15V
- Number of Pins :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Switching Energy :
- 1.8mJ (on), 1mJ (off)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 1.85V
- Reverse Recovery Time :
- 60 ns
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 32 Weeks
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Base Part Number :
- STGWT80
- Mount :
- Through Hole
- Max Collector Current :
- 120A
- Gate-Emitter Voltage-Max :
- 20V
- Weight :
- 6.756003g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Power - Max :
- 469W
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 80A
- Gate Charge :
- 448nC
- Max Power Dissipation :
- 469W
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 600V
- Input Type :
- Standard
- IGBT Type :
- Trench Field Stop
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 60ns/220ns
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 240A
- Packaging :
- Tube
- Datasheets
- STGWT80V60DF
STGWT80V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT80V60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT80V60DF Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 80 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGWT80V60DF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
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