STGW15H120F2

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Mfr.Part #
STGW15H120F2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT H-SERIES 1200V 15A TO-247
Stock
16
In Stock :
16

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Operating Temperature :
-55°C~175°C TJ
Power - Max :
259W
Weight :
38.000013g
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
1.2kV
Base Part Number :
STGW15
Collector Emitter Saturation Voltage :
2.1V
Current - Collector Pulsed (Icm) :
60A
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Max Collector Current :
30A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Gate Charge :
67nC
Factory Lead Time :
32 Weeks
Td (on/off) @ 25°C :
23ns/111ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Test Condition :
600V, 15A, 10 Ω, 15V
Mounting Type :
Through Hole
Mount :
Through Hole
Switching Energy :
380μJ (on), 370μJ (off)
Number of Pins :
3
Packaging :
Tube
Package / Case :
TO-247-3
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
259W
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
1.2kV
IGBT Type :
Trench Field Stop
Vce(on) (Max) @ Vge, Ic :
2.6V @ 15V, 15A
Datasheets
STGW15H120F2
Introducing Transistors - IGBTs - Single STMicroelectronics STGW15H120F2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Base Part Number:STGW15, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, STGW15H120F2 pinout, STGW15H120F2 datasheet PDF, STGW15H120F2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW15H120F2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW15H120F2


STGW15H120F2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW15H120F2 Description


STGW15H120F2 IGBTs was created employing a cutting-edge, exclusive trench gate field-stop construction. These components are a part of the upgraded H series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing high frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.



STGW15H120F2 Features


  • Safe paralleling

  • Minimized tail current

  • Low thermal resistance

  • High speed switching series

  • VCE(sat) = 2.1 V (typ.) @ IC = 15 A

  • Maximum junction temperature: TJ = 175 °C

  • 5 μs minimum short-circuit withstand time at TJ=150 °C



STGW15H120F2 Applications


  • Welding machines

  • Photovoltaic inverters

  • Power factor correction

  • High frequency converters

  • Uninterruptible power supply


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