STGW19NC60W

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Series :

PowerMESH™

Gate-Emitter Thr Voltage-Max :

5.75V

JESD-30 Code :

R-PSFM-T3

Gate Charge :

53nC

Td (on/off) @ 25°C :

25ns/90ns

Base Part Number :

STGW19

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

600V

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

204 ns

Element Configuration :

Single

Current - Collector (Ic) (Max) :

42A

Max Collector Current :

40A

Input Type :

Standard

Mounting Type :

Through Hole

Max Power Dissipation :

140W

Turn On Time :

33 ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Mount :

Through Hole

Packaging :

Tube

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

Motor Control

Moisture Sensitivity Level (MSL) :

Not Applicable

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

3

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Pin Count :

3

Test Condition :

390V, 12A, 10 Ω, 15V

Switching Energy :

81μJ (on), 125μJ (off)

Number of Elements :

1

JEDEC-95 Code :

TO-247AC