STGWT30V60DF

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Mfr.Part #
STGWT30V60DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 60A 258W TO3P-3
Stock
6,514
In Stock :
6,514

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Element Configuration :
Single
Height :
26.7mm
Factory Lead Time :
32 Weeks
Collector Emitter Saturation Voltage :
2.35V
Switching Energy :
383μJ (on), 233μJ (off)
Package / Case :
TO-3P-3, SC-65-3
Max Collector Current :
60A
Packaging :
Tube
Length :
15.7mm
Number of Pins :
3
Current - Collector Pulsed (Icm) :
120A
Td (on/off) @ 25°C :
45ns/189ns
IGBT Type :
Trench Field Stop
ECCN Code :
EAR99
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 30A
Gate Charge :
163nC
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
600V
Base Part Number :
STGWT30
Collector Emitter Voltage (VCEO) :
600V
Width :
5.7mm
Test Condition :
400V, 30A, 10 Ω, 15V
Reverse Recovery Time :
53 ns
Mounting Type :
Through Hole
Max Power Dissipation :
258W
Radiation Hardening :
No
Input Type :
Standard
Power Dissipation :
258W
Operating Temperature :
-55°C~175°C TJ
Datasheets
STGWT30V60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Base Part Number:STGWT30, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, STGWT30V60DF pinout, STGWT30V60DF datasheet PDF, STGWT30V60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT30V60DF


STGWT30V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT30V60DF Description


This STGWT30V60DF is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30V60DF is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT30V60DF Features


Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.85 V (typ.) @ IC = 30 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode



STGWT30V60DF Applications


Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters


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