STGWT30V60DF

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Mfr.Part #
STGWT30V60DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 60A 258W TO3P-3
Stock
6,514
In Stock :
6,514

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Power Dissipation :
258W
Td (on/off) @ 25°C :
45ns/189ns
Current - Collector Pulsed (Icm) :
120A
Mount :
Through Hole
Length :
15.7mm
Collector Emitter Breakdown Voltage :
600V
Packaging :
Tube
Operating Temperature :
-55°C~175°C TJ
IGBT Type :
Trench Field Stop
Collector Emitter Voltage (VCEO) :
600V
Base Part Number :
STGWT30
Element Configuration :
Single
Mounting Type :
Through Hole
Test Condition :
400V, 30A, 10 Ω, 15V
Number of Pins :
3
Package / Case :
TO-3P-3, SC-65-3
Width :
5.7mm
RoHS Status :
ROHS3 Compliant
Input Type :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
258W
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 30A
Factory Lead Time :
32 Weeks
Reverse Recovery Time :
53 ns
Max Collector Current :
60A
ECCN Code :
EAR99
Height :
26.7mm
Radiation Hardening :
No
Gate Charge :
163nC
Collector Emitter Saturation Voltage :
2.35V
Switching Energy :
383μJ (on), 233μJ (off)
Datasheets
STGWT30V60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Base Part Number:STGWT30, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, STGWT30V60DF pinout, STGWT30V60DF datasheet PDF, STGWT30V60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT30V60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT30V60DF


STGWT30V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT30V60DF Description


This STGWT30V60DF is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30V60DF is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT30V60DF Features


Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.85 V (typ.) @ IC = 30 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode



STGWT30V60DF Applications


Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters


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