STGWT30H65FB

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Mfr.Part #
STGWT30H65FB
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 650V 30A 260W TO3PL
Stock
464
In Stock :
464

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Element Configuration :
Single
Max Power Dissipation :
260W
ECCN Code :
EAR99
Factory Lead Time :
32 Weeks
IGBT Type :
Trench Field Stop
Collector Emitter Saturation Voltage :
1.75V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Gate Charge :
149nC
Collector Emitter Voltage (VCEO) :
650V
Package / Case :
TO-3P-3, SC-65-3
Current - Collector Pulsed (Icm) :
120A
Collector Emitter Breakdown Voltage :
650V
Input Type :
Standard
Base Part Number :
STGWT30
Mount :
Through Hole
Td (on/off) @ 25°C :
37ns/146ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Collector Current :
30A
Operating Temperature :
-55°C~175°C TJ
Weight :
6.756003g
Test Condition :
400V, 30A, 10 Ω, 15V
Number of Pins :
3
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Switching Energy :
151μJ (on), 293μJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
260W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Mounting Type :
Through Hole
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT30H65FB from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Base Part Number:STGWT30, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, STGWT30H65FB pinout, STGWT30H65FB datasheet PDF, STGWT30H65FB amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT30H65FB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT30H65FB


STGWT30H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT30H65FB Description


The STGWT30H65FB is a Trench gate field-stop IGBT, HB series 650 V, 30 A high speed. These gadgets are IGBTs that were created employing a cutting-edge, exclusive trench gate fieldstop structure. These components are a part of the latest generation of IGBTs, the HB series, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operations.



STGWT30H65FB Features


  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Maximum junction temperature: TJ = 175 °C

  • High speed switching series

  • Minimized tail current



STGWT30H65FB Applications


  • Welding

  • High-frequency converters

  • Photovoltaic inverters

  • Power factor correction


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