STGWT20V60F
- Mfr.Part #
- STGWT20V60F
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 167W TO3PF
- Stock
- 587
- In Stock :
- 587
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Mount :
- Through Hole
- Base Part Number :
- STGWT20
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Width :
- 5mm
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Transistor Application :
- POWER CONTROL
- Mounting Type :
- Through Hole
- Power Dissipation :
- 167W
- Td (on/off) @ 25°C :
- 38ns/149ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Test Condition :
- 400V, 20A, 15V
- IGBT Type :
- Trench Field Stop
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 20A
- Length :
- 15.8mm
- Element Configuration :
- Single
- Input Type :
- Standard
- Number of Pins :
- 3
- Pin Count :
- 2
- Switching Energy :
- 200μJ (on), 130μJ (off)
- Height :
- 20.1mm
- Package / Case :
- TO-3P-3, SC-65-3
- Max Collector Current :
- 40A
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Nom (toff) :
- 173 ns
- Transistor Element Material :
- SILICON
- Gate Charge :
- 116nC
- Collector Emitter Saturation Voltage :
- 2.3V
- Current - Collector Pulsed (Icm) :
- 80A
- Turn On Time :
- 49 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 167W
- Factory Lead Time :
- 32 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Datasheets
- STGWT20V60F

STGWT20V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGWT20V60F Description
This STGWT20V60F is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT20V60F is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT20V60F Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGWT20V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
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