STGWT20V60DF

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Mfr.Part #
STGWT20V60DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 600V 40A 167W TO3P-3
Stock
235
In Stock :
235

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Pulsed (Icm) :
80A
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Max Power Dissipation :
167W
Td (on/off) @ 25°C :
38ns/149ns
Height :
26.7mm
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 20A
RoHS Status :
ROHS3 Compliant
Power Dissipation :
167W
Collector Emitter Voltage (VCEO) :
600V
Switching Energy :
200μJ (on), 130μJ (off)
Polarity/Channel Type :
N-Channel
Radiation Hardening :
No
Gate-Emitter Voltage-Max :
20V
Collector Emitter Breakdown Voltage :
600V
Mounting Type :
Through Hole
Length :
15.7mm
Packaging :
Tube
Max Collector Current :
40A
Collector Emitter Saturation Voltage :
2.3V
Package / Case :
TO-3P-3, SC-65-3
Test Condition :
400V, 20A, 15V
IGBT Type :
Trench Field Stop
Base Part Number :
STGWT20
ECCN Code :
EAR99
Element Configuration :
Single
Factory Lead Time :
32 Weeks
Number of Pins :
3
Reverse Recovery Time :
40ns
Width :
5.7mm
Gate Charge :
116nC
Input Type :
Standard
Datasheets
STGWT20V60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT20V60DF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Base Part Number:STGWT20, Number of Pins:3, STGWT20V60DF pinout, STGWT20V60DF datasheet PDF, STGWT20V60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT20V60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT20V60DF


STGWT20V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT20V60DF Description


This gadget is an IGBT created using an innovative, exclusive trench gates and field stops structure. The apparatus is a member of the "V" series of IGBTs, which are the ideal compromise between switching losses and conduction to maximize very high-frequency effectiveness converters. Moreover, a successful VCE (sat) temperature coefficient and extremely precise parameter distribution make simultaneous operations safer.



STGWT20V60DF Features


  • Maximum junction temperature: TJ = 175 °C

  • Very high speed switching series

  • Tail-less switching off

  • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Very fast soft recovery antiparallel diode

  • Lead free package



STGWT20V60DF Applications


  • Photovoltaic inverters

  • Uninterruptible power supply

  • Welding

  • Power factor correction

  • Very high frequency converters


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