STGW40V60F

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Mfr.Part #
STGW40V60F
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 283W TO247
Stock
6,093
In Stock :
6,093

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
2.35V
IGBT Type :
Trench Field Stop
Test Condition :
400V, 40A, 10 Ω, 15V
Collector Emitter Breakdown Voltage :
600V
Base Part Number :
STGW40
Length :
15.75mm
Number of Pins :
3
Td (on/off) @ 25°C :
52ns/208ns
Power Dissipation :
283W
Switching Energy :
456μJ (on), 411μJ (off)
Max Collector Current :
80A
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Gate Charge :
226nC
Height :
20.15mm
Package / Case :
TO-247-3
Max Power Dissipation :
283W
Turn-Off Delay Time :
208 ns
Factory Lead Time :
20 Weeks
Operating Temperature :
-55°C~175°C TJ
Collector Emitter Voltage (VCEO) :
600V
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Width :
5.15mm
Turn On Delay Time :
52 ns
Input Type :
Standard
ECCN Code :
EAR99
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mount :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 40A
Current - Collector Pulsed (Icm) :
160A
Datasheets
STGW40V60F
Introducing Transistors - IGBTs - Single STMicroelectronics STGW40V60F from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGW40, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, STGW40V60F pinout, STGW40V60F datasheet PDF, STGW40V60F amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW40V60F ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW40V60F


STGW40V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW40V60F  Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGW40V60F  Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (typ.) @ IC = 40 A

Tight parameters distribution

Safe paralleling

Low thermal resistance



STGW40V60F  Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters




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