STGW40S120DF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Switching Energy :

1.43mJ (on), 3.83mJ (off)

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Case Connection :

COLLECTOR

Gate Charge :

129nC

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

Turn Off Time-Nom (toff) :

158.46 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reverse Recovery Time :

355 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Power Dissipation :

468W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Base Part Number :

STGW40

Factory Lead Time :

41 Weeks

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 40A

Max Collector Current :

80A

IGBT Type :

Trench Field Stop

Turn On Time :

50 ns

Collector Emitter Breakdown Voltage :

1.2kV

Mounting Type :

Through Hole

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tube

Test Condition :

600V, 40A, 15 Ω, 15V

Power - Max :

468W

Input Type :

Standard

Td (on/off) @ 25°C :

35ns/148ns

Current - Collector Pulsed (Icm) :

160A

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

2.15V

Package / Case :

TO-247-3

REACH SVHC :

No SVHC