STGW25H120DF2

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Mfr.Part #
STGW25H120DF2
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT H-SERIES 1200V 25A TO-247
Stock
59
In Stock :
59

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
50A
RoHS Status :
ROHS3 Compliant
Test Condition :
600V, 25A, 10 Ω, 15V
Collector Emitter Voltage (VCEO) :
1.2kV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
32 Weeks
Td (on/off) @ 25°C :
29ns/130ns
Contact Plating :
Tin
Base Part Number :
STGW25
Voltage - Collector Emitter Breakdown (Max) :
1200V
Reverse Recovery Time :
303 ns
Packaging :
Tube
Power - Max :
375W
Collector Emitter Breakdown Voltage :
1.2kV
Vce(on) (Max) @ Vge, Ic :
2.6V @ 15V, 25A
Mount :
Through Hole
Max Power Dissipation :
375W
Collector Emitter Saturation Voltage :
2.1V
Input Type :
Standard
Current - Collector Pulsed (Icm) :
100A
Gate Charge :
100nC
IGBT Type :
Trench Field Stop
Weight :
38.000013g
Switching Energy :
600μJ (on), 700μJ (off)
Element Configuration :
Single
Package / Case :
TO-247-3
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Operating Temperature :
-55°C~175°C TJ
ECCN Code :
EAR99
Mounting Type :
Through Hole
Number of Pins :
3
Datasheets
STGW25H120DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGW25H120DF2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGW25, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, STGW25H120DF2 pinout, STGW25H120DF2 datasheet PDF, STGW25H120DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGW25H120DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGW25H120DF2


STGW25H120DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGW25H120DF2 Description


STGW25H120DF2 is a member of the H series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-247 package to save board space. 



STGW25H120DF2 Features


Low conduction and switching losses

A slightly positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Supplied in the TO-247 package

High-speed switching series



STGW25H120DF2 Applications


Uninterruptible power supply

Welding machines

Photovoltaic inverters

Power factor correction

High-frequency converters


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