STD888T4
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- Mfr.Part #
- STD888T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A DPAK
- Stock
- 8,597
- In Stock ：
- 8,597
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Width :
- 6.2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Packaging :
- Digi-Reel®
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 15W
- Terminal Finish :
- Matte Tin (Sn) - annealed
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Height :
- 2.4mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Base Part Number :
- STD888
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 15W
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-252AA
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Saturation Voltage :
- 1.5V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STD888T4
STD888T4 Documents
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PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-Reel® Surface Mount
STD888T4 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.2V @ 500mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5A volts is possible.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics
STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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