STD888T4
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- Mfr.Part #
- STD888T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A DPAK
- Stock
- 8,597
- In Stock ：
- 8,597
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.5V
- Height :
- 2.4mm
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Base Part Number :
- STD888
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 30V
- Packaging :
- Digi-Reel®
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Power Dissipation :
- 15W
- Mount :
- Surface Mount
- Max Power Dissipation :
- 15W
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Width :
- 6.2mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 6.6mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Datasheets
- STD888T4
STD888T4 Documents
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PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-Reel® Surface Mount
STD888T4 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.2V @ 500mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5A volts is possible.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics
STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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