STD888T4
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- Mfr.Part #
- STD888T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A DPAK
- Stock
- 8,597
- In Stock ：
- 8,597
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Packaging :
- Digi-Reel®
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.2mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-252AA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Transistor Type :
- PNP
- Power Dissipation :
- 15W
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- STD888
- Height :
- 2.4mm
- Collector Emitter Saturation Voltage :
- 1.5V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 2
- Max Power Dissipation :
- 15W
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 6.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Datasheets
- STD888T4
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PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-Reel® Surface Mount
STD888T4 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.2V @ 500mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5A volts is possible.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics
STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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