STD888T4
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- Mfr.Part #
- STD888T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A DPAK
- Stock
- 8,597
- In Stock ：
- 8,597
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.5V
- Max Collector Current :
- 5A
- Power Dissipation :
- 15W
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Height :
- 2.4mm
- Base Part Number :
- STD888
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Digi-Reel®
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Width :
- 6.2mm
- Length :
- 6.6mm
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 15W
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-252AA
- Max Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- STD888T4
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PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-Reel® Surface Mount
STD888T4 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.2V @ 500mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5A volts is possible.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics
STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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