STD826T4
- Mfr.Part #
- STD826T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A DPAK
- Stock
- 3,060
- In Stock :
- 3,060
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Cut Tape (CT)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Power Dissipation :
- 15W
- Base Part Number :
- STD826
- Peak Reflow Temperature (Cel) :
- 260
- Saturation Current :
- 3A
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 30V
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 100μA
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 15W
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 150mA, 3A
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- STD826T4
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PNP 150°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD826T4 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 150mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
STD826T4 Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
STD826T4 Applications
There are a lot of STMicroelectronics
STD826T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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