STD80N6F6
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- Mfr.Part #
- STD80N6F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 80A DPAK
- Stock
- 32,971
- In Stock ：
- 32,971
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 5mOhm
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 80A
- Base Part Number :
- STD80
- Height :
- 4.6mm
- Length :
- 10.4mm
- Power Dissipation-Max :
- 120W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Width :
- 9.35mm
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 120W
- Input Capacitance (Ciss) (Max) @ Vds :
- 7480pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STD80N6F6
STD80N6F6 Documents
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N-Channel Tape & Reel (TR) 6.5m Ω @ 40A, 10V ±20V 7480pF @ 25V 122nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD80N6F6 Description
STD80N6F6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. The operating temperature of the STD80N6F6 is -55°C~175°C TJ and its maximum power dissipation is 120W. This device is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
STD80N6F6 Features
-
AEC-Q101 qualified
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
STD80N6F6 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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