STD80N6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Channels :

1

Height :

4.6mm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Lead Free :

Lead Free

Power Dissipation-Max :

120W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Continuous Drain Current (ID) :

80A

Power Dissipation :

120W

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7480pF @ 25V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Width :

9.35mm

Resistance :

5mOhm

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Surface Mount

Length :

10.4mm

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

STD80

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V