STD80N4F6
- Mfr.Part #
- STD80N4F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A DPAK
- Stock
- 7,521
- In Stock :
- 7,521
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 70W
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Breakdown Voltage :
- 40V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 11.9 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 46.1 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 6.2mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.6mm
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Turn On Delay Time :
- 10.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 7.6ns
- Resistance :
- 6mOhm
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 40A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 70W Tc
- Radiation Hardening :
- No
- Height :
- 2.4mm
- Element Configuration :
- Single
- Base Part Number :
- STD80
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Datasheets
- STD80N4F6
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N-Channel Cut Tape (CT) 6m Ω @ 40A, 10V ±20V 2150pF @ 25V 36nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD80N4F6 Description
The device is an N-channel power MOSFET developed by the 6th generation STripFET "DeepGATE" technology and has a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages.
STD80N4F6 Features
? Designed for automotive applications and
AEC-Q101 qualified
? Low gate charge
? Very low on-resistance
? High avalanche ruggedness
STD80N4F6 Applications
? Switching applications
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