STD80N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

70W

Continuous Drain Current (ID) :

80A

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

11.9 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

FET Type :

N-Channel

Turn-Off Delay Time :

46.1 ns

Gate to Source Voltage (Vgs) :

20V

Width :

6.2mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.6mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Turn On Delay Time :

10.5 ns

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Cut Tape (CT)

Number of Elements :

1

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

7.6ns

Resistance :

6mOhm

Rds On (Max) @ Id, Vgs :

6m Ω @ 40A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

70W Tc

Radiation Hardening :

No

Height :

2.4mm

Element Configuration :

Single

Base Part Number :

STD80

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 25V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc