STD85N10F7AG
- Mfr.Part #
- STD85N10F7AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 70A DPAK
- Stock
- 16,150
- In Stock :
- 16,150
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 280A
- Vgs (Max) :
- ±20V
- Base Part Number :
- STD85
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Position :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 70A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 50V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 85W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain-source On Resistance-Max :
- 0.01Ohm
- Series :
- Automotive, AEC-Q101, STripFET™
- Datasheets
- STD85N10F7AG
STD85N10F7AG Documents
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N-Channel Tape & Reel (TR) 10m Ω @ 40A, 10V ±20V 3100pF @ 50V 45nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
Description
The STD85N10F7AG is an Automotive-grade N-channel 100 V, 0.0085 ? typ., 70 A STripFET? F7 Power MOSFET in a DPAK package. By combining STripFET? F7 technology with an improved trench gate structure, this N-channel Power MOSFET achieves extremely low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.
Features
-
Excellent figure of merit (FoM)
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
-
Designed for automotive applications and AEC-Q101 qualified
-
Among the lowest RDS(on) on the market
Applications
-
Switching applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
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