STD80N10F7

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Mfr.Part #
STD80N10F7
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 70A DPAK
Stock
10,914
In Stock :
10,914

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
6.6mm
Transistor Application :
SWITCHING
Power Dissipation-Max :
85W Tc
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 50V
Fall Time (Typ) :
13 ns
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Mounting Type :
Surface Mount
Weight :
3.949996g
Rds On (Max) @ Id, Vgs :
10m Ω @ 40A, 10V
Number of Elements :
1
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
70A
Series :
DeepGATE™, STripFET™ VII
FET Type :
N-Channel
Element Configuration :
Single
Base Part Number :
STD80
Turn On Delay Time :
19 ns
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
2.4mm
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Turn-Off Delay Time :
36 ns
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Rise Time :
32ns
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1
Width :
6.2mm
Drain to Source Voltage (Vdss) :
100V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN Code :
EAR99
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
ULTRA LOW-ON RESISTANCE
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Pulsed Drain Current-Max (IDM) :
280A
Terminal Form :
Gull wing
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD80N10F7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:STD80, Number of Terminations:2, Number of Pins:3, Number of Channels:1, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, STD80N10F7 pinout, STD80N10F7 datasheet PDF, STD80N10F7 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD80N10F7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD80N10F7


N-Channel Tape & Reel (TR) 10m Ω @ 40A, 10V ±20V 3100pF @ 50V 45nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

STD80N10F7 Description


The STD80N10F7 device utilizes the 7th generation of design rules of ST's proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.



STD80N10F7 Features


  • Extremely low gate charge

  • Ultra low on-resistance

  • Low gate input resistance

  • ROHS3 Compliant

  • Lead Free



STD80N10F7 Applications


  • Switching applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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