STD80N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Additional Feature :

ULTRA LOW-ON RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Mount :

Surface Mount

Height :

2.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

36 ns

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Turn On Delay Time :

19 ns

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Transistor Application :

SWITCHING

Width :

6.2mm

Continuous Drain Current (ID) :

70A

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.6mm

Case Connection :

DRAIN

Number of Pins :

3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Mounting Type :

Surface Mount

Power Dissipation-Max :

85W Tc

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

STD80

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

280A

Fall Time (Typ) :

13 ns

Series :

DeepGATE™, STripFET™ VII

Rise Time :

32ns