STD80N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

3.949996g

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

85W Tc

Fall Time (Typ) :

13 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Lead Free :

Lead Free

Base Part Number :

STD80

Height :

2.4mm

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Vgs (Max) :

±20V

Series :

DeepGATE™, STripFET™ VII

Additional Feature :

ULTRA LOW-ON RESISTANCE

Rise Time :

32ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Length :

6.6mm

Turn On Delay Time :

19 ns

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Pulsed Drain Current-Max (IDM) :

280A

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Number of Terminations :

2

Continuous Drain Current (ID) :

70A

ECCN Code :

EAR99

Width :

6.2mm

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn-Off Delay Time :

36 ns

Current - Continuous Drain (Id) @ 25°C :

70A Tc