STD3NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Power Dissipation :

42W

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 25V

Resistance :

1.5Ohm

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-65°C~150°C TJ

Fall Time (Typ) :

10.5 ns

Number of Terminations :

2

Number of Pins :

3

Width :

6.2mm

Series :

MDmesh™

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Current Rating :

3A

Length :

6.6mm

Terminal Form :

Gull wing

Base Part Number :

STD3N

Transistor Element Material :

SILICON

Rise Time :

4ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 10V

Power Dissipation-Max :

42W Tc

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Height :

2.4mm

Avalanche Energy Rating (Eas) :

200 mJ

Mount :

Surface Mount

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

9 ns

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Continuous Drain Current (ID) :

3A