STD30NE06LT4
- Mfr.Part #
- STD30NE06LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A DPAK
- Stock
- 41,589
- In Stock :
- 41,589
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 30A
- Fall Time (Typ) :
- 45 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 55W Tc
- Current Rating :
- 30A
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 15A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Rise Time :
- 100ns
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Series :
- STripFET™
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STD30N
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.03Ohm
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2370pF @ 25V
- FET Type :
- N-Channel
- Power Dissipation :
- 55W
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 120A
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 5V
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 60V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Datasheets
- STD30NE06LT4
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N-Channel Tape & Reel (TR) 28m Ω @ 15A, 10V ±20V 2370pF @ 25V 41nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30NE06LT4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is a peak drain current of 120A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
STD30NE06LT4 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 120A.
STD30NE06LT4 Applications
There are a lot of STMicroelectronics
STD30NE06LT4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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