STD30NE06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

STripFET™

Element Configuration :

Single

Rise Time :

100ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

55W Tc

Lead Free :

Lead Free

Current Rating :

30A

Rds On (Max) @ Id, Vgs :

28m Ω @ 15A, 10V

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

100 mJ

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power Dissipation :

55W

Terminal Form :

Gull wing

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Operating Temperature :

175°C TJ

Number of Elements :

1

Base Part Number :

STD30N

Pulsed Drain Current-Max (IDM) :

120A

Fall Time (Typ) :

45 ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Pin Count :

3

Drain to Source Breakdown Voltage :

60V

Drain-source On Resistance-Max :

0.03Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

30A