STD30NE06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

120A

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

60V

Base Part Number :

STD30N

Fall Time (Typ) :

45 ns

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.03Ohm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

55W Tc

Number of Elements :

1

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JESD-30 Code :

R-PSSO-G2

Series :

STripFET™

Avalanche Energy Rating (Eas) :

100 mJ

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

175°C TJ

Pin Count :

3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

30A

Vgs (Max) :

±20V

Power Dissipation :

55W

Terminal Form :

Gull wing

Rise Time :

100ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Continuous Drain Current (ID) :

30A

FET Type :

N-Channel

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

28m Ω @ 15A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Qualification Status :

Not Qualified