STD35N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn On Delay Time :

4 ns

Input Capacitance (Ciss) (Max) @ Vds :

725pF @ 25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation :

35W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

3.5 ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 15A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Series :

STripFET™ V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Case Connection :

DRAIN

Continuous Drain Current (ID) :

35A

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Pin Count :

3

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Power Dissipation-Max :

35W Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

Resistance :

16mOhm

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Turn-Off Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Base Part Number :

STD35

Rise Time :

4ns

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3