STD30N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

50W Tc

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

3.949996g

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

22 ns

Length :

6.6mm

Mount :

Surface Mount

Height :

2.4mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 16A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

DeepGATE™, STripFET™ VII

Width :

6.2mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 50V

Base Part Number :

STD30N

Continuous Drain Current (ID) :

32A

Turn On Delay Time :

12 ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

5.6 ns

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Rise Time :

17.5ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)