STD30N10F7
- Mfr.Part #
- STD30N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 32A DPAK
- Stock
- 5,864
- In Stock :
- 5,864
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- DeepGATE™, STripFET™ VII
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 16A, 10V
- Base Part Number :
- STD30N
- Width :
- 6.2mm
- Weight :
- 3.949996g
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Height :
- 2.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 50W Tc
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 12 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 32A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 100V
- Length :
- 6.6mm
- Number of Pins :
- 3
- Number of Channels :
- 1
- Rise Time :
- 17.5ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 22 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 5.6 ns
- Datasheets
- STD30N10F7
STD30N10F7 Documents
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N-Channel Tape & Reel (TR) 24m Ω @ 16A, 10V 1270pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30N10F7 Description
The STD30N10F7 N-channel Power MOSFET is based on STripFETTM F7 technology, which features an improved trench gate structure that reduces internal capacitance and gate charge for quicker and more efficient switching.
STD30N10F7 Features
-
High avalanche ruggedness
-
Excellent FoM (figure of merit)
-
Low Crss/Ciss ratio for EMI immunity
-
Among the lowest RDS(on) on the market
STD30N10F7 Applications
-
Medical
-
Switching applications
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