STD30PF03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

6.6mm

Rds On (Max) @ Id, Vgs :

28m Ω @ 12A, 10V

Transistor Element Material :

SILICON

Voltage - Rated DC :

-30V

Number of Pins :

3

Width :

6.2mm

Rise Time :

122ns

Operating Temperature :

175°C TJ

Mounting Type :

Surface Mount

Series :

STripFET™ II

JEDEC-95 Code :

TO-252AA

Height :

2.4mm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

1 V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 25V

REACH SVHC :

No SVHC

Turn On Delay Time :

64 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs (Max) :

±16V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Turn-Off Delay Time :

36 ns

Current Rating :

-24A

JESD-609 Code :

e3

Base Part Number :

STD30

Continuous Drain Current (ID) :

24A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation :

70W

Pulsed Drain Current-Max (IDM) :

96A

Avalanche Energy Rating (Eas) :

850 mJ

Weight :

4.535924g

Threshold Voltage :

-1V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

70W Tc

Resistance :

28mOhm

Element Configuration :

Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Fall Time (Typ) :

26 ns

Drain to Source Breakdown Voltage :

-30V

Terminal Form :

Gull wing