STD30PF03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

Rise Time :

122ns

Width :

6.2mm

Mount :

Surface Mount

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

24A

Pin Count :

3

Transistor Application :

SWITCHING

Nominal Vgs :

1 V

Avalanche Energy Rating (Eas) :

850 mJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Pulsed Drain Current-Max (IDM) :

96A

Number of Pins :

3

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Length :

6.6mm

Power Dissipation :

70W

Current Rating :

-24A

Fall Time (Typ) :

26 ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

ECCN Code :

EAR99

Operating Temperature :

175°C TJ

Turn On Delay Time :

64 ns

Turn-Off Delay Time :

36 ns

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 25V

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

28m Ω @ 12A, 10V

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-30V

Power Dissipation-Max :

70W Tc

Height :

2.4mm

Series :

STripFET™ II

Resistance :

28mOhm

Threshold Voltage :

-1V

Element Configuration :

Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Lead Free :

Lead Free

Vgs (Max) :

±16V

Base Part Number :

STD30

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V