STD30NE06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Power Dissipation-Max :

55W Tc

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

28m Ω @ 15A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

45 ns

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

175°C TJ

Power Dissipation :

55W

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

120A

Rise Time :

100ns

Drain-source On Resistance-Max :

0.03Ohm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Element Configuration :

Single

Base Part Number :

STD30N

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Elements :

1

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

100 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Current Rating :

30A

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Series :

STripFET™

Number of Terminations :

2

Continuous Drain Current (ID) :

30A

Terminal Finish :

MATTE TIN

Voltage - Rated DC :

60V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified