STD30NE06L
- Mfr.Part #
- STD30NE06L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A DPAK
- Stock
- 11,746
- In Stock :
- 11,746
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-252AA
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2370pF @ 25V
- Base Part Number :
- STD30N
- Pulsed Drain Current-Max (IDM) :
- 120A
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 100 mJ
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 15A, 10V
- Voltage - Rated DC :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 5V
- Current Rating :
- 30A
- Rise Time :
- 100ns
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 55W Tc
- FET Type :
- N-Channel
- Pin Count :
- 3
- Fall Time (Typ) :
- 45 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.03Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 30A
- Terminal Form :
- Gull wing
- Operating Temperature :
- 175°C TJ
- Power Dissipation :
- 55W
- Series :
- STripFET™
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STD30NE06L
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N-Channel Tube 28m Ω @ 15A, 10V ±20V 2370pF @ 25V 41nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30NE06L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.Peak drain current for this device is 120A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STD30NE06L Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 120A.
STD30NE06L Applications
There are a lot of STMicroelectronics
STD30NE06L applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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